LVC540 datasheet(5/9 Pages) ONSEMI

5 / 9 page

74LVC540A

www.onsemi.com

AC ELECTRICAL CHARACTERISTICS (tR = tF = 2.5 ns)

Symbol

Parameter

Conditions

−40

5C to +855C

−40

5C to +1255C

Unit

Min

Typ5

Max

Min

Typ5

Max

tpd

Propagation Delay (Note 6)

nDn to nOn

VCC = 1.2 V

−

18.0

−

VCC = 1.65 V to 1.95 V

1.0

−

16.4

1.0

−

16.4

VCC = 2.3 V to 2.7 V

1.0

−

7.8

1.0

−

7.8

VCC = 2.7 V

1.0

−

7.1

1.0

−

7.1

VCC = 3.0 V to 3.6 V

1.0

−

5.3

1.0

−

5.3

ten

Enable Time (Note 7)

nOE to nOn

VCC = 1.2 V

−

20.0

−

VCC = 1.65 V to 1.95 V

1.0

−

16.5

1.0

−

16.5

VCC = 2.3 V to 2.7 V

1.0

−

10.5

1.0

−

10.5

VCC = 2.7 V

1.0

−

8.0

1.0

−

8.0

VCC = 3.0 V to 3.6 V

1.0

−

6.6

1.0

−

6.6

tdis

Disable Time (Note 8)

nOE to nOn

VCC = 1.2 V

−

18.0

−

VCC = 1.65 V to 1.95 V

1.0

−

15.9

1.0

−

15.9

VCC = 2.3 V to 2.7 V

1.0

−

9.0

1.0

−

9.0

VCC = 2.7 V

1.0

−

8.2

1.0

−

8.2

VCC = 3.0 V to 3.6 V

1.0

−

7.4

1.0

−

7.4

tsk(0)

Output Skew Time (Note 9)

−

1.0

−

1.5

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

5. Typical values are measured at TA = 25

°C and VCC = 3.3 V, unless stated otherwise.

6. tpd is the same as tPLH and tPHL.

7. ten is the same as tPZL and tPZH.

8. tdis is the same as tPLZ and tPHZ.

9. Skew between any two outputs of the same package switching in the same direction. This parameter is guaranteed by design.

DYNAMIC SWITCHING CHARACTERISTICS

Symbol

Characteristic

Condition

TA = +25°C

Unit

Min

Typ

Max

VOLP

Dynamic LOW Peak Voltage (Note 10)

VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V

VCC = 2.5 V, CL = 30 pF, VIH = 2.5 V, VIL = 0 V

0.8

0.6

VOLV

Dynamic LOW Valley Voltage (Note

10)

VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V

VCC = 2.5 V, CL = 30 pF, VIH = 2.5 V, VIL = 0 V

−0.8

−0.6

10. Number of outputs defined as “n”. Measured with “n−1” outputs switching from HIGH−to−LOW or LOW−to−HIGH. The remaining output is

measured in the LOW state.

CAPACITIVE CHARACTERISTICS

Symbol

Parameter

Condition

Typical

Unit

CIN

Input Capacitance

VCC = 3.3 V, VI = 0 V or VCC

5.0

COUT

Output Capacitance

VCC = 3.3 V, VI = 0 V or VCC

7.0

CPD

Power Dissipation Capacitance

(Note 11)

Per input; VI = GND or VCC

VCC = 1.65 V to 1.95 V

7.7

VCC = 2.3 V to 2.7 V

11.3

VCC = 3.0 V to 3.6 V

14.4

11. CPD is used to determine the dynamic power dissipation (PD in mW).

PD = CPD * VCC2 x fi * N + S (CL x VCC2 x fo) where:

fi = input frequency in MHz; fo = output frequency in MHz

CL = output load capacitance in pF VCC = supply voltage in Volts

N = number of outputs switching

S(CL * VCC2 x fo) = sum of the outputs.

LVC540 Datasheet(PDF) 5 Page - ON Semiconductor

LVC540 Datasheet(HTML) 5 Page - ON Semiconductor

Html Pages

1 2 3 4 5 6 7 8 9

Datasheet Download

Link URL