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BSP613P Datasheet(PDF) 1 Page - Infineon Technologies AG

Part # BSP613P
Description  SIPMOS횘 Small-Signal-Transistor
PDF  9 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BSP613P Datasheet(HTML) 1 Page - Infineon Technologies AG

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20
16-05-30
Rev.2.
8
Page 1
BSP613P
SIPMOS® Small-Signal-Transistor
Product Summary
VDS
-60
V
RDS(on)
0.13
Ω
ID
-2.9
A
Feature
• P-Channel
• Enhancement mode
• Avalanche rated
• dv/dt rated
• Ideal for fast switching buck converter
PG-SOT223
Gate
pin1
Drain
pin 2,4
Source
pin 3
Type
Package
Tape and reel
BSP613P
PG-SOT223
H6327: 1000pcs/r.
Maximum Ratings
, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
TA=25°C
TA=70°C
ID
-2.9
-2.3
A
Pulsed drain current
TA=25°C
ID puls
-11.6
Avalanche energy, single pulse
ID=2.9 A , VDD=-25V, RGS=25Ω
EAS
150
mJ
Avalanche energy, periodic limited by Tjmax
EAR
0.18
Reverse diode dv/dt
IS=2.9A, VDS=-48V, di/dt=-200A/µs, Tjmax=150°C
dv/dt
6
kV/µs
Gate source voltage
VGS
±20
V
Power dissipation
TA=25°C
Ptot
1.8
W
Operating and storage temperature
Tj , Tstg
-55... +150
°C
IEC climatic category; DIN IEC 68-1
55/150/56
Non  Dry
BSP613P
Packaging
Marking
• Qualified according to AEC Q101
ESD Class
JESD22-A114-HBM
Class 1
c
• Halogen­free according to IE C61249­2­21


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