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LM2877P Datasheet(PDF) 2 Page - National Semiconductor (TI) |
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LM2877P Datasheet(HTML) 2 Page - National Semiconductor (TI) |
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2 / 8 page ![]() Absolute Maximum Ratings If MilitaryAerospace specified devices are required please contact the National Semiconductor Sales OfficeDistributors for availability and specifications Supply Voltage 26V Input Voltage g 07V Operating Temperature 0 Cto a70 C Storage Temperature b 65 Cto a150 C Junction Temperature 150 C Lead Temperature (Soldering 10 sec) 260 C Thermal Resistance iJC 10 CW iJA 55 CW Electrical Characteristics VS e 20V TTAB e 25 C RL e 8X AV e 50 (34 dB) unless otherwise specified Parameter Conditions Min Typ Max Units Total Supply Current PO e 0W 25 50 mA Operating Supply Voltage 6 24 V Output PowerChannel f e 1 kHz THD e 10% TTAB e 25 C VS e 20V 40 45 W VS e 18V 36 W VS e 12V RL e 4X 15 19 W VS e 12V RL e 8X 10 W Distortion THD f e 1 kHz VS e 20V PO e 50 mWChannel 01 % PO e 1WChannel 007 1 % PO e 2WChannel 007 % f e 1 kHz VS e 12V RL e 4X PO e 50 mWChannel 025 % PO e 500 mWChannel 020 % PO e 1WChannel 015 1 % Output Swing RL e 8X VSb4Vp-p Channel Separation CF e 50 mF CIN e 01 mF f e 1 kHz Output Referred VS e 20V VO e 4 Vrms b 50 b 70 dB VS e 7V VO e 05 Vrms b 60 dB PSRR Power Supply CF e 50 mF CIN e 01 mF f e 120 Hz Rejection Ratio Output Referred VS e 20V VRIPPLE e 1 Vrms b 50 b 68 dB VS e 7V VRIPPLE e 05 Vrms b 40 dB Noise Equivalent Input Noise RS e 0 CIN e 01 mF BW e 20 Hz–20 kHz 25 m V Output Noise Wideband RS e 0 CIN e 01 mF AV e 200 080 mV Open Loop Gain RS e 0 f e 1 kHz RL e 8X 70 dB Input Offset Voltage 15 mV Input Bias Current 50 nA Input Impedance Open Loop 4 MX DC Output Level VS e 20V 9 10 11 V Slew Rate 20 V ms Power Bandwidth 65 kHz Current Limit 10 A Note 1 For operation at ambient temperature greater than 25 C the LM2877 must be derated based on a maximum 150 C junction temperature using a thermal resistance which depends upon device mounting techniques 2 |
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