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STM8AL3136 Datasheet(PDF) 81 Page - STMicroelectronics

Part # STM8AL3136
Description  Automotive 8-bit ultra-low-power MCU, up to 32 Kbyte Flash, RTC, data EEPROM, LCD, timers, USART, I2C, SPI, ADC, DAC, COMPs
PDF  124 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM8AL3136 Datasheet(HTML) 81 Page - STMicroelectronics

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STM8AL313x/4x/6x STM8AL3L4x/6x
Electrical parameters
108
Data memory
9.3.6
I/O current injection characteristics
As a general rule, current injection to the I/O pins, due to external voltage below VSS or
above VDD (for standard pins) should be avoided during normal product operation. However,
in order to give an indication of the robustness of the microcontroller in cases when
abnormal injection accidentally happens, susceptibility tests are performed on a sample
basis during device characterization.
Functional susceptibility to I/O current injection
While a simple application is executed on the device, the device is stressed by injecting
current into the I/O pins programmed in floating input mode. While current is injected into
the I/O pin, one at a time, the device is checked for functional failures.
The failure is indicated by an out of range parameter: ADC error, out of spec current
injection on adjacent pins or other functional failure (for example reset, oscillator frequency
deviation, LCD levels, etc.).
The test results are given in the following table.
Table 39. Data memory
Symbol
Parameter
Conditions
Min
Max
Unit
TWE
Temperature for writing and erasing
-
-40
125
°C
NWE
Data memory endurance
(erase/write cycles)(1)
1. The physical granularity of the memory is four bytes, so cycling is performed on four bytes even when a
write/erase operation addresses a single byte.
TA = 25 °C
300 k
-
cycles
TA = -40 to 125 °C 100 k(2)
2. More information on the relationship between data retention time and number of write/erase cycles is
available in a separate technical document.
-
tRET
Data retention time
TA = 25 °C
40(2)(3)
3. Retention time for 256B of data memory after up to 1000 cycles at 125 °C.
-
years
TA = 55 °C
20(2)(3)
-
Table 40. I/O current injection susceptibility
Symbol
Description
Functional susceptibility
Unit
Negative
injection
Positive
injection
IINJ
Injected current on true open-drain pins
(PC0 and PC1)
-5
+0
mA
Injected current on all five-volt tolerant (FT) pins
-5
+0
Injected current on all 3.6 V tolerant (TT) pins
-5
+0
Injected current on any other pin
-5
+5



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