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STP180N10F3 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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STP180N10F3 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc N-Channel Mosfet Transistor STP180N10F3 · ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 100 V VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 4 V RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 60A 4.8 mΩ IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 ± 200 nA IDSS Zero Gate Voltage Drain Current VDS= 100V; VGS= 0 10 uA VSD* Diode Forward Voltage IF= 120A; VGS=0 1.5 V *:pulse duration=300us,duty cycle 1.5%. |
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