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DG213 Datasheet(PDF) 4 Page - TEMIC Semiconductors |
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DG213 Datasheet(HTML) 4 Page - TEMIC Semiconductors |
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4 / 7 page ![]() DG213 4 Siliconix S-56461—Rev. C, 29-Dec-97 Typical Characteristics 0 50 100 150 200 250 300 02468 10 12 85 _C –20 –16 –12 –8 –4 0 4 8 12 16 20 40 50 60 70 80 90 100 110 0 10 20 30 40 50 –15 –10 –5 0 5 10 15 "5 V rDS(on) vs. VD and Power Supply Voltages VD – Drain Voltage (V) "10 V "15 V "20 V rDS(on) vs. VD and Temperature VD – Drain Voltage (V) 125 _C 25 _C –55 _C V+ = 15 V V– = –15 V 30 20 10 60 70 80 90 100 rDS(on) vs. VD and Single Power Supply Voltages VD – Drain Voltage (V) 5 V 7 V 10 V 12 V –20 –15 –10 –5 0 5 10 15 20 40 20 0 –20 –40 Leakage Currents vs. Analog Voltage IS(off), ID(off) ID(on) –55 25 45 5 –15 65 1 nA 100 pA 10 pA –35 1 pA 85 105 125 V+ = 15 V V– = –15 V VS, VD = "14 V IS(off), ID(off) Temperature ( _C) Leakage Current vs. Temperature VANALOG – Analog Voltage (V) V+ = 22 V V– = –22 V TA = 25_C 30 10 –10 –30 –15 –10 –5 0 5 10 15 30 20 10 0 –10 –20 –30 V+ = 15 V V– = –15 V V+ = 12 V V– = 0 V QS, QD – Charge Injection vs. Analog Voltage VANALOG – Analog Voltage (V) V– = 0 V VL = 5 V |
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