2SD1016 datasheet(1/2 Pages) ISC

Part #	2SD1016

Description	Silicon NPN Power Transistor

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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isc Product Specification

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isc Silicon NPN Power Transistor

2SD1016

DESCRIPTION

·

High Collector-Base Voltage-

: VCBO= 1500V(Min)

·

High Current Capability

·

100% avalanche tested

·

Minimum Lot-to-Lot variations for robust device performance

and reliable operation

APPLICATIONS

·

Designed for use in large screen color deflection circuits .

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.64

℃

/W

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

1500

V

VCEO

Collector-Emitter Voltage

800

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

7

A

ICM

Collector Current-Peak

10

A

PC

Collector Power Dissipation

@TC=25℃

50

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-65~150

℃

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2SD1016 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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