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STM8AL3LE8x Datasheet(PDF) 118 Page - STMicroelectronics |
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STM8AL3LE8x Datasheet(HTML) 118 Page - STMicroelectronics |
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118 / 133 page  Electrical parameters STM8AL31E8x STM8AL3LE8x 118/133 DocID027180 Rev 5 Electromagnetic interference (EMI) Based on a simple application running on the product (toggling 2 LEDs through the I/O ports), the product is monitored in terms of emission. This emission test is in line with the norm IEC61967-2 which specifies the board and the loading of each pin. Absolute maximum ratings (electrical sensitivity) Based on two different tests (ESD and LU) using specific measurement methods, the product is stressed in order to determine its performance in terms of electrical sensitivity. For more details, refer to the application note AN1181. Electrostatic discharge (ESD) Electrostatic discharges (a positive then a negative pulse separated by 1 second) are applied to the pins of each sample according to each pin combination. The sample size depends on the number of supply pins in the device (3 parts*(n+1) supply pin). Two models are simulated: human body model and charge device model. This test conforms to the ANSI/ESDA/JEDEC JS-001, JESD22-A115 and ANSI/ESD S5.3.1. Table 61. EMI data (1) 1. Guaranteed by characterization results. Symbol Parameter Conditions Monitored frequency band Max vs. Unit 16 MHz SEMI Peak level VDD = 3.6 V, TA = +25 °C, LQFP80 conforming to IEC61967-2 0.1 MHz to 30 MHz 10 dB μV 30 MHz to 130 MHz 4 130 MHz to 1 GHz 1 EMI Level 1.5 - Table 62. ESD absolute maximum ratings Symbol Ratings Conditions Class Maximum value (1) 1. Guaranteed by characterization results. Unit VESD(HBM) Electrostatic discharge voltage (human body model) TA = 25 °C, conforming to ANSI/ESDA/ JEDEC JS-001 2 2000 V VESD(CDM) Electrostatic discharge voltage (charge device model) TA = 25 °C, conforming to ANSI/ESD S5.3.1 C4B 500 VESD(MM) Electrostatic discharge voltage (machine model) TA = 25 °C, conforming to JESD22-A115 M2 200 |
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