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IRF7910 Datasheet(PDF) 1 Page - International Rectifier |
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IRF7910 Datasheet(HTML) 1 Page - International Rectifier |
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1 / 8 page  www.irf.com 1 4/29/02 IRF7910 HEXFET® Power MOSFET Notes through are on page 8 Thermal Resistance Absolute Maximum Ratings Symbol Parameter Max. Units VDS Drain-Source Voltage 12 V VGS Gate-to-Source Voltage ± 12 V ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 10 ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V 7.9 A IDM Pulsed Drain Current 79 PD @TA = 25°C Maximum Power Dissipation 2.0 W PD @TA = 70°C Maximum Power Dissipation 1.3 W Linear Derating Factor 16 mW/°C TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C SO-8 PD - 94419 Applications Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current l High Frequency 3.3V and 5V input Point- of-Load Synchronous Buck Converters for Netcom and Computing Applications l Power Management for Netcom, Computing and Portable Applications Symbol Parameter Typ. Max. Units RθJL Junction-to-Drain Lead ––– 20 RθJA Junction-to-Ambient ––– 62.5 °C/W D1 D1 D2 D2 G1 S2 G2 S1 Top View 8 1 2 3 4 5 6 7 VDSS RDS(on) max ID 12V 15m Ω @VGS = 4.5V 10A |
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