STGWA50M65DF2 datasheet(6/16 Pages) STMICROELECTRONICS

Part #	STGWA50M65DF2

Description	Trench gate field-stop IGBT, M series 650 V, 50 A low loss

PDF	16 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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6 / 16 page

Electrical characteristics

STGWA50M65DF2

6/16

DocID028694 Rev 2

Table 7: Diode switching characteristics (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

trr

Reverse recovery time

IF = 50 A, VR = 400 V,

VGE = 15 V

(see Figure 29: " Test circuit

for inductive load switching")

di/dt = 1000 A/µs

162

Qrr

Reverse recovery charge

1.37

µC

Irrm

Reverse recovery current

dIrr/dt

Peak rate of fall of reverse

recovery current during tb

420

A/µs

Err

Reverse recovery energy

192

µJ

trr

Reverse recovery time

IF = 50 A, VR = 400 V,

VGE = 15 V, TJ = 175 °C

(see Figure 29: " Test circuit

for inductive load switching")

di/dt = 1000 A/µs

262

Qrr

Reverse recovery charge

5.1

µC

Irrm

Reverse recovery current

dIrr/dt

Peak rate of fall of reverse

recovery current during tb

160

A/µs

Err

Reverse recovery energy

676

µJ

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