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STGYA120M65DF2 Datasheet(PDF) 5 Page - STMicroelectronics

Part # STGYA120M65DF2
Description  Trench gate field-stop IGBT, M series 650 V, 120 A low loss
PDF  16 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGYA120M65DF2 Datasheet(HTML) 5 Page - STMicroelectronics

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STGYA120M65DF2
Electrical characteristics
DocID029193 Rev 4
5/16
Table 6: IGBT switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VCE = 400 V, IC = 120 A,
VGE = 15 V, RG = 4.7
Ω
(see Figure 29: " Test circuit
for inductive load switching" )
66
-
ns
tr
Current rise time
38
-
ns
(di/dt)on
Turn-on current slope
2500
-
A/µs
td(off)
Turn-off-delay time
185
-
ns
tf
Current fall time
85
-
ns
Eon(1)
Turn-on switching energy
1.8
-
mJ
Eoff(2)
Turn-off switching energy
4.41
-
mJ
Ets
Total switching energy
6.21
-
mJ
td(on)
Turn-on delay time
VCE = 400 V, IC = 120 A,
VGE = 15 V, RG = 4.7
Ω
TJ = 175 °C (see Figure 29: "
Test circuit for inductive load
switching" )
62
-
ns
tr
Current rise time
48
-
ns
(di/dt)on
Turn-on current slope
2016
-
A/µs
td(off)
Turn-off-delay time
187
-
ns
tf
Current fall time
164
-
ns
Eon(1)
Turn-on switching energy
4.4
-
mJ
Eoff(2)
Turn-off switching energy
6.0
-
mJ
Ets
Total switching energy
10.4
-
mJ
tsc
Short-circuit withstand time
VCC
≤ 400 V, VGE = 13 V,
TJstart = 150 °C
10
-
µs
VCC
≤ 400 V, VGE = 15 V,
TJstart = 150 °C
6
-
Notes:
(1)Including the reverse recovery of the diode.
(2)Including the tail of the collector current.
Table 7: Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
trr
Reverse recovery time
IF = 120 A, VR = 400 V,
VGE = 15 V (see Figure 29: "
Test circuit for inductive load
switching") di/dt = 1000 A/µs
-
202
-
ns
Qrr
Reverse recovery charge
-
2.9
-
µC
Irrm
Reverse recovery current
-
32.5
-
A
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
-
500
-
A/µs
Err
Reverse recovery energy
-
500
-
µJ
trr
Reverse recovery time
IF = 120 A, VR = 400 V,
VGE = 15 V TJ = 175 °C
(see Figure 29: " Test circuit
for inductive load switching")
di/dt = 1000 A/µs
-
320
-
ns
Qrr
Reverse recovery charge
-
11.2
-
µC
Irrm
Reverse recovery current
-
62
-
A
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
-
270
-
A/µs
Err
Reverse recovery energy
-
1710
-
µJ



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