STP200N3LL datasheet(4/13 Pages) STMICROELECTRONICS

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Electrical characteristics

STP200N3LL

4/13

DocID028758 Rev 2

Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 4: Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID = 1 mA

IDSS

Zero gate voltage drain

current

VGS = 0 V, VDS = 30 V

µA

VGS = 0 V, VDS = 30 V,

Tcase = 125 °C(1)

IGSS

Gate-body leakage current

VDS = 0 V, VGS = ±20 V

±100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

2.5

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 60 A

2.15

2.4

mΩ

VGS = 4.5 V, ID = 60 A

2.5

3.1

Notes:

(1)Defined by design, not subject to production test.

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz, VGS = 0 V

5200

Coss

Output

capacitance

640

Crss

Reverse transfer

capacitance

510

Total gate charge

VDD = 15 V, ID = 120 A, VGS = 4.5 V

(see Figure 14: "Test circuit for gate

charge behavior")

Qgs

Gate-source

charge

Qgd

Gate-drain

charge

Intrinsic gate

resistance

f = 1 MHz, ID = 0 A, gate DC bias = 0 V,

magnitude of alternative signal = 20 mV

1.1

Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay

time

VDD = 15 V, ID = 60 A RG = 4.7

Ω,

VGS = 10 V (see Figure 13: "Test circuit

for resistive load switching times" and

Figure 18: "Switching time waveform")

Rise time

183

td(off)

Turn-off delay

time

Fall time

108

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