2SB817E datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

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isc Silicon PNP Power Transistor

2SB817E

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= -30mA ; RBE=∞

-140

V(BR)CBO

Collector-Base Breakdown Voltage

IC= -5mA; IE= 0

-160

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= -5mA; IC= 0

-6

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -5.0A; IB= -0.5A

-2.5

VBE(on)

Base -Emitter On Voltage

IC= -5A ; VCE= -5V

-1.5

ICBO

Collector Cutoff Current

VCB= -160V ; IE=0

-100

IEBO

Emitter Cutoff Current

VEB= -4V; IC=0

-100

hFE-1

DC Current Gain

IC= -1A ; VCE= -5V

100

200

hFE-2

DC Current Gain

IC= -5A ; VCE= -5V

COB

Output Capacitance

IE=0 ; VCB= -10V;ftest= 1.0MHz

210

Current-Gain—Bandwidth Product

IC=-1A ; VCE= -5V

MHz

Switching times

ton

Turn-on Time

IC= -1A ,RL= 20Ω,

IB1= -IB2= -0.1A,VCC=-20V

0.25

tstg

Storage Time

1.61

Fall Time

0.53

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