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2SD1184 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1184 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor 2SD1184 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞ 800 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 1500 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A 1.5 V ICBO Collector Cutoff Current VCB= 1500V; IE=0 100 μ A IEBO Emitter Cutoff Current VEB= 6V; IC=0 100 μ A hFE -1 DC Current Gain IC= 0.3A; VCE= 5V 14 hFE -2 DC Current Gain IC= 1A; VCE= 5V 10 30 tf Fall Time IC= 1A, IB1=IB2= 0.3A 1.0 μ s tstg Storage Time 10 μ s |
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