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2SD1204 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # 2SD1204
Description  Silicon NPN Darlington Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD1204 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SD1204 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SD1204 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon NPN Darlington Power Transistor
2SD1204
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
V
B
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
B
C
B
= 50mA; I
B
B
B
= 0
400
V
V
B
CE
(sat)-1
Collector-Emitter Saturation Voltage
I
B
C
B
= 8 A; I
B
B
B
= 100mA
1.6
V
V
B
CE
(sat)-2
Collector-Emitter Saturation Voltage
I
B
C
B
= 10 A; I
B
B
B
= 250mA
1.8
V
V
B
CE
(sat)-3
Collector-Emitter Saturation Voltage
I
B
C
B
= 12 A; I
B
B
B
= 300mA
2.0
V
V
B
BE
(sat)-1
Base-Emitter Saturation Voltage
I
B
C
B
= 8 A; I
B
B
B
= 100mA
2.2
V
V
B
BE
(sat)-2
Base-Emitter Saturation Voltage
I
B
C
B
= 10 A; I
B
B
B
= 250mA
2.5
V
ICES
Collector Cutoff Current
V
B
CE
B
= 500V;V
B
BE
B
= 0
V
B
CE
B
= 500V;V
B
BE
B
= 0;T
B
j
B
= 125℃
0.1
0.5
mA
ICEO
Collector Cutoff Current
V
B
CE
B
= 400V; I
B
B
B
= 0
0.1
mA
IEBO
Emitter Cutoff Current
V
B
EB
= 5V; I
B
C
B
= 0
20
mA
hFE-1
DC Current Gain
I
B
C
B
= 5A ; VCE= 3V
750
hFE-2
DC Current Gain
I
B
C
B
= 15A ; VCE= 3V
100
VECF
C-E Diode Forward Voltage
IF= 10A
2.5
V



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