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2SD1239 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1239 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor 2SD1239 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IB= 0 150 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 120 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 10 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 1A 2.0 V ICBO Collector Cutoff Current VCB= 150V; IE= 0 0.1 mA ICEO Collector Cutoff Current VCE= 120V; IB= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 0.1 mA hFE-1 DC Current Gain IC= 1A ; VCE= 2V 100 300 hFE-2 DC Current Gain IC= 10A ; VCE= 2V 20 COB Output Capacitance IE= 0 ; VCB= 10V,ftest= 1MHz 200 pF |
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