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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

HMC347

GaAs MMIC SPDT NON-REFLECTIVE

SWITCH, DC - 20 GHz

v04.0907

General Description

Features

Functional Diagram

The HMC347 is a broadband non-reflective GaAs

MESFET SPDT MMIC chip. Covering DC to 20 GHz,

the switch offers high isolation and low insertion loss.

The switch features over 50 dB isolation at lower

frequencies and over 40 dB at higher frequencies due

to the implementation of on-chip via hole structures.

The switch operates using two negative control volt-

age logic lines of -5/0V, requires no Vee and has no

current consumption. The switch operates down to

DC. The chip features coplanar I/Os that allow 100%

RF testing prior to delivery to the customer.

High Isolation: >40 dB @ 20 GHz

Low Insertion Loss: 1.6 dB @ 20 GHz

Non-Reflective Design

Small Size: 1.3 x 0.8 x 0.1 mm

Typical Applications

This switch is suitable DC - 20 GHz applications:

• Fiber Optics

• Microwave Radio

• Military

• Space

• VSAT

Parameter

Frequency

Min.

Typ.

Max.

Units

Insertion Loss

DC - 20.0 GHz

1.7

2.2

dB

Isolation

DC - 20.0 GHz

40

45

dB

Return Loss

“On State”

DC - 20.0 GHz

10

13

dB

Return Loss RF1, RF2

“On State”

DC - 20.0 GHz

8

10

dB

Input Power for 1 dB Compression

0.5 - 20.0 GHz

19

23

dBm

Input Third Order Intercept

0.5 - 20.0 GHz

38

43

dBm

Switching Characteristics

tRISE, tFALL (10/90% RF)

tON, tOFF (50% CTL to 10/90% RF)

DC - 20.0 GHz

3

6

ns

ns