TPC8303 datasheet(1/7 Pages) TOSHIBA

Part #	TPC8303

Description	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)

PDF	7 Pages

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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TPC8303

2002-04-18

1

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSII)

TPC8303

Lithium Ion Battery Applications

Portable Equipment Applications

Notebook PCs

Low drain−source ON resistance : RDS (ON) = 27 mΩ (typ.)

High forward transfer admittance : |Yfs| = 7 S (typ.)

Low leakage current : IDSS = −10 µA (max) (VDS = −30 V)

Enhancement−mode : Vth = −0.8~ −2.0 V (VDS = −10 V, ID = −1 mA)

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

VDSS

−30

V

Drain-gate voltage (RGS = 20 kΩ)

VDGR

−30

V

Gate-source voltage

VGSS

±20

V

DC

(Note 1)

ID

−4.5

Drain current

Pulse

(Note 1)

IDP

−18

A

Single-device

operation

(Note 3a)

PD (1)

1.5

Drain power

dissipation

(t = 10s)

(Note 2a)

Single-device value

at dual operation

(Note 3b)

PD(2)

1.0

W

Single-device

operation

(Note 3a)

PD (1)

0.75

Drain power

dissipation

(t = 10s)

(Note 2b)

Single-device value

at dual operation

(Note 3b)

PD (2)

0.45

W

Single pulse avalanche energy

(Note 4)

EAS

26

mJ

Avalanche current

IAR

−4.5

A

Repetitive avalanche energy

Single-device value at operation

(Note 2a, Note 3b, Note 5)

EAR

0.10

mJ

Channel temperature

Tch

150

°C

Storage temperature range

Tstg

−55~150

°C

Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4) and (Note 5), please refer to the next page.

This transistor is an electrostatic sensitive device. Please handle with caution.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-6J1E

Weight: 0.08 g (typ.)

Circuit Configuration

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