For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824

Phone: 978-250-3343

Fax: 978-250-3373

Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

4

HMC451

v03.0913

GaAs pHEMT MMIC MEDIUM

pOWER AMpLIFIER, 5 - 20 GHz

Absolute Maximum Ratings

Drain Bias Voltage (Vdd)

+5.5 Vdc

RF Input Power (RFIN)(Vdd = +5Vdc)

+10 dBm

Channel Temperature

175 °C

Continuous Pdiss (T= 85 °C)

(derate 13 mW/°C above 85 °C)

1.2 W

Thermal Resistance

(channel to die bottom)

75 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-55 to +85 °C

Vdd (V)

Idd (mA)

+4.5

125

+5.0

127

+5.5

129

Typical Supply Current vs. Vdd

Note: Amplifier will operate over full voltage ranges shown above

Outline Drawing

NOTES:

1. ALL DIMENSIONS ARE IN INCHES [MM]

2. DIE THICKNESS IS .004”

3. TYPICAL BOND PAD IS .004” SQUARE

4. BACKSIDE METALLIZATION: GOLD

5. BOND PAD METALLIZATION: GOLD

6. BACKSIDE METAL IS GROUND.

7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.

8. OVERALL DIE SIZE ± .002

Standard

Alternate

GP-2 (Gel Pack)

[2]

[1] Refer to the “Packaging Information” section for die

packaging dimensions.

[2] For alternate packaging information contact Hittite

Microwave Corporation.

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS