HP8MA2 datasheet(2/22 Pages) ROHM

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HP8MA2

Datasheet

lThermal resistance

Parameter

Symbol

Values

Unit

Min.

Typ.

Max.

Thermal resistance, junction - ambient

RthJA*4

41.7

℃/W

lElectrical characteristics (Ta = 25°C)

Parameter

Symbol Type

Conditions

Values

Unit

Min.

Typ.

Max.

Drain - Source breakdown

voltage

V(BR)DSS

Tr1

VGS = 0V, ID = 1mA

Tr2

VGS = 0V, ID = -1mA

-30

Breakdown voltage

temperature coefficient

　ΔV(BR)DSS　 Tr1 ID = 1mA, referenced to 25℃

mV/℃

　　 ΔTj 　　 Tr2 ID = -1mA, referenced to 25℃

-22

Zero gate voltage

drain current

IDSS

Tr1

VDS = 30V, VGS = 0V

μA

Tr2

VDS = -30V, VGS = 0V

-1

Gate - Source

leakage current

IGSS

Tr1

VDS = 0V, VGS = ±20V

±100

Tr2

VDS = 0V, VGS = ±20V

±100

Gate threshold

voltage

VGS(th)

Tr1

VDS = VGS, ID = 1mA

1.0

2.5

Tr2

VDS = VGS, ID = -1mA

-1.0

-2.5

Gate threshold voltage

temperature coefficient

　ΔVGS(th) 　 Tr1 ID = 1mA, referenced to 25℃

-3

mV/℃

　　 ΔTj 　　 Tr2 ID = -1mA, referenced to 25℃

2.9

Static drain - source

on - state resistance

RDS(on)*5

Tr1

VGS = 10V, ID = 18A

7.5

9.6

mΩ

VGS = 4.5V, ID = 18A

11.7

16.5

Tr2

VGS = -10V, ID = -15A

13.2

17.9

VGS = -4.5V, ID = -15A

21.0

29.0

Gate resistance

Tr1

f=1MHz, open drain

2.5

Tr2

Forward Transfer

Admittance

|Yfs|*5

Tr1

VDS = 5V, ID = 18A

8.5

Tr2

VDS = -5V, ID = -15A

9.0

*1 Pw ≦ 1s, Limited only by maximum temperature allowed.

*2 Pw ≦ 10μs, Duty cycle ≦ 1%

*3 Tr1: L ⋍ 0.05mH, VDD = 15V, RG = 25Ω, Starting Tj = 25℃ Fig.3-1,3-2

Tr2: L ⋍ 0.05mH, VDD = -15V, RG = 25Ω, Starting Tj = 25℃ Fig.6-1,6-2

*4 Mounted on a Cu board (40×40×0.8mm)

*5 Pulsed

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20160706 - Rev.002

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