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2SC5713 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SC5713 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
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1 / 5 page  2SC5713 2001-12-17 1 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5713 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.15 V (max) • High-speed switching: tf = 50 ns (typ.) Maximum Ratings (Ta ==== 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEX 15 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 7 V DC IC 4 Collector current Pulse ICP 7 A Base current IB 400 mA DC 1.0 Collector power dissipation t = 10 s PC (Note) 2.5 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm 2) Electrical Characteristics (Ta ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 20 V, IE = 0 100 nA Emitter cut-off current IEBO VEB = 7 V, IC = 0 100 nA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 10 V hFE (1) VCE = 2 V, IC = 0.5 A 400 1000 DC current gain hFE (2) VCE = 2 V, IC = 1.6 A 200 Collector-emitter saturation voltage VCE (sat) IC = 1.6 A, IB = 32 mA 0.15 V Base-emitter saturation voltage VBE (sat) IC = 1.6 A, IB = 32 mA 1.10 V Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz 28 pF Rise time tr 110 Storage time tstg 150 Switching time Fall time tf See Figure 1 circuit diagram. VCC ∼− 6 V, RL = 3.75 Ω IB1 = −IB2 = 53 mA 50 ns Industrial Applications Unit: mm JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.) |
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