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2SC5880 Datasheet(PDF) 2 Page - Rohm |
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2SC5880 Datasheet(HTML) 2 Page - Rohm |
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2 / 4 page ![]() 2SC5880 Transistors Rev.A 2/3 Electrical characteristics (Ta=25 °C) Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Corrector output capacitance Turn-on time Storage time Fall time Parameter Symbol Min. Typ. Max. Unit Condition BVCEO BVCBO BVEBO ICBO IEBO VCE (sat) hFE fT Cob Ton Tstg Tf ∗Non repetitive pulse IC =1mA IC =100µA IE =100µA VCB =40V VEB =4V IC =1.0A IB =0.1A VCE =2V IC =100mA VCE =10V IE = −100mA f =10MHz VCB =10V IE =0mA f =1MHz ∗ 60 60 6 − − − 120 − − − − − − − − − − 200 − 200 10 50 120 35 − − − 1.0 1.0 500 390 − − − − − V V V µA µA mV − MHz pF ns ns ns IC =2A IB1 =200mA IB2 = −200mA VCC 25V hFE RANK Q 120 −270 R 180 −390 Electrical characteristic curves 0.01 100 10 1 0.1 COLLECTOR TO EMITTER VOLTAGE : VCE (V) 0.001 0.01 0.1 1 10 Fig.1 Safe Operating Area Single non repetitive Pulsed 100ms 10ms 1ms DC 0.01 10 1 0.1 10 100 1000 COLLECTOR CURRENT : IC (A) Fig.2 Switching Time Ta =25°C VCC =25V IC / IB =10 / 1 Tstg Tf Ton 0.001 0.01 0.1 1 10 1 10 100 1000 COLLECTOR CURRENT : IC (A) Fig.3 DC Current Gain vs. Collector Current ( Ι) Ta =125°C Ta =25°C Ta = −40°C VCE =2V 0.001 0.01 0.1 1 10 1 10 100 1000 COLLECTOR CURRENT : IC (A) Fig.4 DC Current Gain vs. Collector Current ( ΙΙ) Ta =25°C VCE =5V VCE =3V VCE =2V 0.001 10 1 0.1 0.01 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) IC / IB =10 / 1 Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current ( Ι) Ta =125°C Ta =25°C Ta = −40°C 0.001 10 1 0.1 0.01 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Ta =25°C IC / IB =20 / 1 IC / IB =10 / 1 Fig.6 Collector-Emitter Saturation Voltage vs. Collector Current ( ΙΙ) |
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