MLX92213 datasheet(2/11 Pages) MELEXIS

2 / 11 page

390109221302

Rev 003

1 Functional Diagram

2 General Description

The MLX92213 Micropower Low-V

Hall effect sensor IC is fabricated in

CMOS

technology.

incorporates

Correlated Double Sampling (CDS)

provide accurate and stable magne

points.

In order to save power, the internal

alternates

Awake

and

Sleep

significantly reducing the power cons

magnetic flux density is periodica

against predefined thresholds. If the f

above/below the BOP/BRP

threshol

Output changes its state accordingl

Sleep mode the Output is latched in

MicroPower &

Hall Effect Latch

Page 2 of 10

Voltage Latch

mixed signal

ates

advanced

techniques to

agnetic switching

l Timing Logic

modes,

thus

sumption. The

ally evaluated

flux density is

ds, then the

ly. During the

n its previous

state.

The

design

has

been

applications requiring extended

in battery-powered systems.

flexibility by enabling exter

Micropower Period and Duty C

The Push-pull Output of the

latched in Low state in the

sufficiently strong South magn

facing the marked side of

Output will be latched in

presence of a sufficiently str

field (B < BRP).

LX92213

& Low-Voltage

atch with Enable

Data Sheet

Mar/12

been

optimized

for

nded operating lifetime

The EN pin adds

rnal control of the

Cycle.

the MLX92213 will be

the presence of a

agnetic field (B > BOP)

of the package. The

High state in the

rong North magnetic

MLX92213 Datasheet(PDF) 2 Page - Melexis Microelectronic Systems

MLX92213 Datasheet(HTML) 2 Page - Melexis Microelectronic Systems

Html Pages

1 2 3 4 5 6 7 8 9 10 11

Datasheet Download

Link URL