MBR6045 datasheet(1/3 Pages) GENESIC

Part #	MBR6045

Description	Not ESD Sensitive

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	GENESIC [GeneSiC Semiconductor, Inc.]

Direct Link	http://www.genesicsemi.com/

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1 / 3 page

VRRM = 45 V - 100 V

IF = 60 A

Features

• High Surge Capability

DO-5 Package

• Not ESD Sensitive

Note:

1. Standard polarity: Stud is cathode.

3. Stud is base.

Parameter

Symbol

MBR6045 (R) MBR6060 (R)

Unit

Repetitive peak reverse voltage

VRRM

45

60

V

RMS reverse voltage

VRMS

32

42

V

DC blocking voltage

VDC

45

60

V

2. Reverse polarity (R): Stud is anode.

Silicon Power

Schottky Diode

MBR6045 thru MBR60100R

MBR60100 (R)

80

50

MBR6080 (R)

Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

• Types from 45 V to 100 V VRRM

Conditions

100

70

100

80

DC blocking voltage

VDC

45

60

V

Continuous forward current

IF

60

A

Operating temperature

Tj

-55 to 150

°C

Storage temperature

Tstg

-55 to 150

°C

Parameter

Symbol

MBR6045 (R) MBR6060(R)

Unit

Diode forward voltage

0.65

0.75

55

150

Thermal characteristics

Thermal resistance, junction -

case

RthJC

1.0

°C/W

Reverse current

IR

VF

60

700

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Surge non-repetitive forward

current, Half Sine Wave

IF,SM

A

700

mA

V

VR = 20 V, Tj = 25 °C

IF = 60 A, Tj = 25 °C

TC ≤ 100 °C

Conditions

700

-55 to 150

60

5

MBR6080 (R)

1.0

VR = 20 V, Tj = 125 °C

1.0

0.84

150

-55 to 150

TC = 25 °C, tp = 8.3 ms

100

80

-55 to 150

MBR60100 (R)

5

www.genesicsemi.com/silicon-products/schottky-rectifiers/

1

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