MBR7520 datasheet(1/3 Pages) GENESIC

Part #	MBR7520

Description	Not ESD Sensitive

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	GENESIC [GeneSiC Semiconductor, Inc.]

Direct Link	http://www.genesicsemi.com/

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1 / 3 page

VRRM = 20 V - 40 V

IF(AV) = 75 A

Features

• High Surge Capability

DO-5 Package

• Not ESD Sensitive

Note:

1. Standard polarity: Stud is cathode.

3. Stud is base.

Parameter

Symbol

MBR7520(R) MBR7530(R)

Unit

Repetitive peak reverse voltag

VRRM

20

30

V

RMS reverse voltage

VRMS

14

21

V

DC blocking voltage

VDC

20

30

V

2. Reverse polarity (R): Stud is anode.

MBR7520 thru MBR7540R

MBR7540(R)

35

25

MBR7535(R)

Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

Silicon Power

Schottky Diode

Conditions

40

28

40

35

• Types from 20 V to 40 V VRRM

DC blocking voltage

VDC

20

30

V

Operating temperature

Tj

-55 to 150

°C

Storage temperature

Tstg

-55 to 150

°C

Parameter

Symbol

MBR7520(R) MBR7530(R)

Unit

Average forward current (per

pkg)

IF(AV)

75

A

Maximum forward voltage

(per leg)

0.75

11

10

20

Thermal characteristics

Thermal resistance, junction-

case (per leg)

R

ΘJC

0.6

°C/W

Inch ponds

(in-pb)

20

Tj = 25 °C

IFM = 75 A, Tj = 25 °C

Conditions

-55 to 150

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Maximum instantaneous

reverse current at rated DC

blocking voltage (per leg)

IR

VF

-55 to 150

MBR7540(R)

11

MBR7535(R)

0.6

Tj = 150 °C

0.6

0.75

20

mA

V

-55 to 150

40

35

TC = 125 °C

75

Peak forward surge current

(per leg)

IFSM

tp = 8.3 ms, half sine

1000

A

Tj = 100 °C

10

Mounting torque

30

www.genesicsemi.com/silicon-products/schottky-rectifiers/

1

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