1

Power Transistors

2SC5405

Silicon NPN triple diffusion planar type

For high-speed switching and high current amplification ratio

q

High-speed switching

q

linearity

q

Dielectric breakdown voltage of the package: > 5kV

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Base current

Collector power

dissipation

Junction temperature

Storage temperature

Symbol

Ratings

80

50

6

6

3

1

20

2.0

150

–55 to +150

Unit

V

V

V

A

A

A

W

˚C

˚C

Parameter

Collector cutoff current

Emitter cutoff current

Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Turn-on time

Storage time

Fall time

Symbol

*

Conditions

min

50

500

typ

0.5

75

0.3

3.5

0.9

max

100

100

100

1500

0.7

Unit

µA

µA

µA

V

V

V

MHz

µs

µs

µs

Rank

P

Q

800 to 1500 500 to 1000

Ta=25

°C

Unit: mm

1:Base

2:Collector

3:Emitter

TO–220D Full Pack Package

1

9.9

±0.3

4.6

±0.2

2.9

±0.2

0.8

±0.1

1.4

±0.2

23

φ3.2±0.1

2.6

±0.1

0.55

±0.15

2.54

±0.3

5.08

±0.5

1.6

±0.2