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IRFJ240 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IRFJ240 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor IRFJ240 DESCRIPTION · Drain Current –ID= 13A@ TC=25℃ · Drain Source Voltage- : VDSS= 200V(Min) · Static Drain-Source On-Resistance : RDS(on) = 0.18Ω(Max) · SIMPLE DRIVE REQUIREMENTS · HERMETICALLY SEALED TO-66 METAL PACKAGE APPLICATIONS · Designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 200 V VGS Gate-Source Voltage ± 20 V ID Drain Current-continuous@ TC=25℃ 13 A Ptot Total Dissipation@TC=25℃ 70 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.8 ℃ /W Rth j-a Thermal Resistance,Junction to Ambient 50 ℃ /W |
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