AF9412N

N-Channel 30-V (D-S) MOSFET

Anachip Corp.

www.anachip.com.tw

Rev. 1.0 Oct 15, 2004

2/5

Symbol

Parameter

Rating

Units

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

9.4

7.4

A

30

A

1.6

A

3.1

2.2

W

Operating Junction and Storage Temperature Range

-55 to 150

ºC

Thermal Resistance Ratings

Symbol

Parameter

Maximum

Units

25

40

ºC/W

Note 1: surface Mounted on 1”x 1” FR4 Board.

Note 2: Pulse width limited by maximum junction temperature

Limits

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Static

30

-

-

V

Gate-Threshold Voltage

1

1.95

3.0

V

Gate-Body Leakage

-

-

±100

nA

-

-

1

Zero Gate Voltage Drain Current

-

-

25

uA

20

-

-

A

-

17

22

-

29

36

Drain-Source On-Resistance

(Note 3)

-

20

27

mΩ

Forward Transconductance

(Note 3)

-

40

-

S

Diode Forward Voltage

-

0.7

1.1

V

Total Gate Charge

-

4.7

8

Gate-Source Charge

-

1.7

-

Gate-Drain Charge

-

1.4

-

nC

Switching

Turn-On Delay Time

-

16

21

Rise Time

-

5

10

Turn-Off Delay Time

-

23

37

Fall-Time

-

3

6

nS

Source-Drain Reverse Recovery

Time

-

41

80

nS

Note 3: Pulse test: PW ≤ 300us duty cycle ≤ 2%.

Note 4: Guaranteed by design, not subject to production testing.