SST38VF6401 datasheet(2/64 Pages) MICROCHIP

2 / 64 page

DS-20005015B

08/15

64 Mbit (x16) Advanced Multi-Purpose Flash Plus

SST38VF6401 / SST38VF6402 / SST38VF6403 / SST38VF6404

Not Recommended for New Designs

Product Description

The SST38VF6401, SST38VF6402, SST38VF6403, and SST38VF6404 devices are 4M x16 CMOS

Advanced Multi-Purpose Flash Plus (Advanced MPF+) manufactured with proprietary, high-perfor-

mance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector

attain better reliability and manufacturability compared with alternate approaches. The SST38VF6401/

6402/6403/6404 write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to

JEDEC standard pin assignments for x16 memories.

Featuring high performance Word-Program, the SST38VF6401/6402/6403/6404 provide a typical Word-

Program time of 7 µsec. For faster word-programming performance, the Write-Buffer Programming

feature, has a typical word-program time of 1.75 µsec. These devices use Toggle Bit or Data# Polling

to indicate Program operation completion. In addition to single-word Read, Advanced MPF+ devices

provide a Page-Read feature that enables a faster word read time of 25 ns, for words on the same

page.

To protect against inadvertent write, the SST38VF6401/6402/6403/6404 have on-chip hardware and

Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of appli-

cations, these devices are available with 100,000 cycles minimum endurance. Data retention is rated

at greater than 100 years.

The SST38VF6401/6402/6403/6404 are suited for applications that require the convenient and econom-

ical updating of program, configuration, or data memory. For all system applications, Advanced MPF+

significantly improve performance and reliability, while lowering power consumption. These devices

inherently use less energy during Erase and Program than alternative flash technologies. The total

energy consumed is a function of the applied voltage, current, and time of application. For any given

voltage range, the SuperFlash technology uses less current to program and has a shorter erase time;

therefore, the total energy consumed during any Erase or Program operation is less than alternative

flash technologies.

These devices also improve flexibility while lowering the cost for program, data, and configuration stor-

age applications. The SuperFlash technology provides fixed Erase and Program times, independent of

the number of Erase/Program cycles that have occurred. Therefore, the system software or hardware

does not have to be modified or de-rated as is necessary with alternative flash technologies, whose

Erase and Program times increase with accumulated Erase/Program cycles.

The SST38VF6401/6402/6403/6404 also offer flexible data protection features. Applications that

require memory protection from program and erase operations can use the Boot Block, Individual

Block Protection, and Advanced Protection features. For applications that require a permanent solu-

tion, the Irreversible Block Locking feature provides permanent protection for memory blocks.

To meet high-density, surface mount requirements, the SST38VF6401/6402/6403/6404 devices are

offered in 48-lead TSOP and 48-ball TFBGA packages. See Figures 2 and 3 for pin assignments and

Table 1 for pin descriptions.

SST38VF6401 Datasheet(PDF) 2 Page - Microchip Technology

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