C1210 datasheet(1/4 Pages) IMP

Part #	C1210

Description	Process C1210 CMOS 1.2mm Zero Threshold Devices

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Manufacturer	IMP [IMP, Inc]

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47

Process C1210

CMOS 1.2

µm

Zero Threshold Devices

N-Channel Transistor

Symbol

Minimum

Typical

Maximum

Unit

Comments

Threshold Voltage

VTN

0.55

0.75

0.95

V

100x1.2

µm

Body Factor

γ

N

0.34

V1/2

100x1.2

µm

Conduction Factor

βN

64

75

86

µA/V2

100x100

µm

Effective Channel Length

LeffN

0.8

1.0

1.2

µm

100x1.2

µm

Width Encroachment

∆WN

0.6

µm

Per side

Punch Through Voltage

BVDSSN

9V

Poly Field Threshold Voltage

VTFP(N)

10

V

P-Channel Transistor

Symbol

Minimum

Typical

Maximum

Unit

Comments

Threshold Voltage

VTP

–0.7

–0.9

–1.1

V

100x1.2

µm

Body Factor

γ

P

0.38

V1/2

100x1.2

µm

Conduction Factor

βP

21

25

29

µA/V2

100x100

µm

Effective Channel Length

LeffP

0.9

1.1

1.3

µm

100x1.2

µm

Width Encroachment

∆WP

0.8

µm

Per side

Punch Through Voltage

BVDSSP

–9.0

V

Poly Field Threshold Voltage

VTFP(P)

–10.0

V

Zero Vt N-Channel Transis.

Symbol

Minimum

Typical

Maximum

Unit

Comments

Threshold Voltage

VTZLN

0.00

0.15

0.30

V

100x100

µm

Body Factor

γ

ZLN

0.348

V1/2

100x100

µm

Conduction Factor

βZLN

75

90

105

µA/V2

100x100

µm

Saturation Current

IDSATZN

28

34

40

mA

100x1.5

µm

Zero Vt P-Channel Transis.

Symbol

Minimum

Typical

Maximum

Unit

Comments

Threshold Voltage

VTZLP

–0.3

–0.1

0.1

V

100x100

µm

Body Factor

γ

ZLP

0.36

V1/2

100x100

µm

Conduction Factor

βZLP

21

26

31

µA/V2

100x100

µm

Saturation Current

IDSATZP

–11

–15

–19

mA

100x1.5

µm

Electrical Characteristics

T=25oC Unless otherwise noted

ISO 9001 Registered

®

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