Specifications and information are subject to change without notice

WJ Communications, Inc

Phone 1-800-WJ1-4401 FAX: 408-577-6621

e-mail: sales@wj.com

Web site: www.wj.com

October 2004 Rev 1

ECP103

1 Watt, High Linearity InGaP HBT Amplifier

Product Information

Product Features

4mm QFN package

Applications

Product Description

The ECP103 is a high dynamic range driver amplifier in

a low-cost surface mount package. The InGaP/GaAs

HBT is able to achieve superior performance for various

narrowband-tuned application circuits with up to +46

dBm OIP3 and +30.5 dBm of compressed 1-dB power.

The part is housed in an industry standard SOIC-8 SMT

package. All devices are 100% RF and DC tested.

The ECP103 is targeted for use as a driver amplifier in

wireless infrastructure where high linearity and medium

power is required. An internal active bias allows the

ECP103 to maintain high linearity over temperature and

operate directly off a single +5V supply.

This

combination makes the device an excellent candidate for

driver amplifier stages in wireless-LAN, digital

multimedia broadcast, or fixed wireless applications. The

device can also be used in next generation RFID readers.

Functional Diagram

ECP103D

ECP103G

Parameter

Units Min Typ Max

Operational Bandwidth

MHz

2300

2700

Test Frequency

MHz

2450

Gain

dB

10

Input Return Loss

dB

18

Output Return Loss

dB

8

Output P1dB

dBm

+30.5

dBm

+46

Noise Figure

dB

6.3

Test Frequency

MHz

2600

Gain

dB

9

Output P1dB

dBm

+30

dBm

+45

mA

400

450

500

Device Voltage, Vcc

V

5

1. Test conditions unless otherwise noted: T = 25ºC, Vsupply = +5 V in a tuned application circuit.

2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The

suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.

3. This corresponds to the quiescent current or operating current under small-signal conditions into

pins 6, 7, and 8. It is expected that the current can increase by an additional 90 mA at P1dB. Pin 1

is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull

10.8 mA of current when used with a series bias resistor of R1=51 . (ie. total device current

typically will be 461 mA.)

Parameter

Units

Typical

Frequency

MHz

2450

2600

S21 – Gain

dB

10

9

S11

dB

15

15

S22

dB

8

8

Output P1dB

dBm

30.5

30.0

Output IP3

dBm

46

45

W-CDMA Channel Power

@ -45 dBc ACPR

dBm

22.5

Noise Figure

dB

7

7

7

+5 V @ 450 mA

4. Typical parameters reflect performance in a tuned application circuit at +25 C.

Absolute Maximum Rating

Ordering Information

Parameters

Rating

Part No.

Description

Operating Case Temperature

-40 to +85

qC

ECP103D

1 Watt InGaP HBT Amplifier (16p 4mm Pkg)

Storage Temperature

-65 to +150

qC

ECP103G

1 Watt InGaP HBT Amplifier (Soic-8 Pkg)

RF Input Power (continuous)

+26 dBm

ECP103D-PCB2450

2450 MHz Evaluation Board

Device Voltage

+8 V

ECP103D-PCB2650

2600 MHz Evaluation Board

Device Current

900 mA

ECP103G-PCB2450

2450 MHz Evaluation Board

Device Power

5 W

ECP103G-PCB2650

2600 MHz Evaluation Board

Operation of this device above any of these parameters may cause permanent damage.

1

2

3

4

12

11

10

9

16

15

14

13

5

6

7

8

N/C

RF OUT

RF OUT

N/C

Vref

N/C

RF IN

N/C

1

2

3

4

8

7

6

5

Vref

N/C

RF IN

N/C

Vbias

RF OUT

RF OUT

N/C