STV200N55F3 datasheet(5/12 Pages) STMICROELECTRONICS

Part #	STV200N55F3

Description	N-channel 55 V, 1.8 mΩ, 200 A, PowerSO-10 STripFET™ Power MOSFET

PDF	12 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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5 / 12 page

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STV200N55F3

Electrical characteristics

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Table 6.

Switching times

Symbol

Parameter

Test conditions

Min. Typ.

Max. Unit

td(on)

Turn-on delay time

Rise time

VDD = 27.5 V, ID = 60 A

RG = 4.7 Ω, VGS = 10 V,

Figure 13

150

td(off)

Turn-off delay time

Fall time

VDD = 27.5 V, ID = 60 A

RG= 4.7 Ω, VGS= 10 V,

Figure 13

110

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ. Max. Unit

ISD

(1)

Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)

200

800

VSD

(2)

Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 120 A, VGS = 0

1.5

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 120 A,di/dt = 100 A/µs

VDD = 35 V, Tj = 150 °C

Figure 18

110

3.5

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