13005 datasheet(1/3 Pages) SEMTECH_ELEC

Part #	13005

Description	NPN Silicon Power Transistors

PDF	3 Pages

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Manufacturer	SEMTECH_ELEC [SEMTECH ELECTRONICS LTD.]

Direct Link	http://www.semtech.net.cn

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1 / 3 page

Dated : 17/09/2016

Rev:02

®

SEMTECH ELECTRONICS LTD.

13005

NPN Silicon Power Transistors

for high-voltage, high-speed power switching

applications.

Absolute Maximum Ratings (Ta = 25 OC)

Parameter

Symbol

Value

Unit

Collector Base Voltage

VCBO

700

V

Collector Emitter Voltage

VCEO

400

V

Emitter Base Voltage

VEBO

9

V

Collector Current

IC

4

A

Power Dissipation (Ta = 25 OC)

Ptot

2

W

Power Dissipation (Tc = 25 OC)

Ptot

75

W

Junction Temperature

Tj

150

O

C

Storage Temperature Range

Tstg

- 55 to + 150

O

C

Characteristics at Ta = 25 OC

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at VCE = 5 V, IC = 1 A

at VCE = 5 V, IC = 2 A

hFE

10

8

-

60

40

-

Collector Base Cutoff Current

at VCB = 700 V

ICBO

-

1

mA

Emitter Base Cutoff Current

at VEB = 9 V

IEBO

-

1

mA

Collector Emitter Breakdown Voltage

at IC = 10 mA

V(BR)CEO

400

-

V

Collector Emitter Saturation Voltage

at IC = 1 A, IB = 0.2 A

at IC = 2 A, IB = 0.5 A

at IC = 4 A, IB = 1 A

VCE(sat)

-

0.5

0.6

1

V

Base Emitter Saturation Voltage

at IC = 1 A, IB = 0.2 A

at IC = 2 A, IB = 0.5 A

VBE(sat)

-

1.2

1.6

V

Gain Bandwidth Product

at VCE = 10 V, IC = 500 mA, f = 1 MHz

fT

4

-

MHz

Collector Base Capacitance

at VCB = 10 V, f = 0.1 MHz

Cob

-

65

-

pF

TO-220 Plastic Package

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13005 Datasheet(PDF) 1 Page - SEMTECH ELECTRONICS LTD.

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