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2SD1514 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # 2SD1514
Description  isc Silicon NPN Darlington Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD1514 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SD1514 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SD1514 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon NPN Darlington Power Transistor
2SD1514
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC=10mA, RBE= ∞
100
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 5mA ,IC= 0
7
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 6A , IB= 10mA
2.0
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 12A , IB= 20mA
2.5
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= 6A , IB= 10mA
2.5
V
VBE(sat)-2
Base-Emitter Saturation Voltage
IC= 12A , IB= 20mA
3.0
V
ICBO
Collector Cutoff current
VCB= 100V, IE= 0
0.1
mA
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
5
mA
hFE-1
DC Current Gain
IC= 5A ; VCE= 3V
1000
20000
hFE-2
DC Current Gain
IC= 10A ; VCE= 3V
1000
Switching Times
ton
Turn-on Time
IC = 6A,IB1 = IB2= 10mA
2.0
μ
s
tstg
Storage Time
10
μ
s
tf
Fall Time
7.0
μ
s



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