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LM3886 Datasheet(PDF) 13 Page - National Semiconductor (TI) |
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LM3886 Datasheet(HTML) 13 Page - National Semiconductor (TI) |
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13 / 20 page ![]() Application Information (Continued) Over-Voltage Protection: The LM3886 contains overvolt- age protection circuitry that limits the output current to ap- proximately 11Apeak while also providing voltage clamping, though not through internal clamping diodes. The clamping effect is quite the same, however, the output transistors are designed to work alternately by sinking large current spikes. SPiKe Protection: The LM3886 is protected from instanta- neous peak-temperature stressing by the power transistor array. The Safe Operating Area graph in the Typical Perfor- mance Characteristics section shows the area of device operation where the SPiKe Protection Circuitry is not en- abled. The waveform to the right of the SOA graph exempli- fies how the dynamic protection will cause waveform distor- tion when enabled. Thermal Protection: The LM3886 has a sophisticated ther- mal protection scheme to prevent long-term thermal stress to the device. When the temperature on the die reaches 165˚C, the LM3886 shuts down. It starts operating again when the die temperature drops to about 155˚C, but if the temperature again begins to rise, shutdown will occur again at 165˚C. Therefore the device is allowed to heat up to a relatively high temperature if the fault condition is temporary, but a sustained fault will cause the device to cycle in a Schmitt Trigger fashion between the thermal shutdown tem- perature limits of 165˚C and 155˚C. This greatly reduces the stress imposed on the IC by thermal cycling, which in turn improves its reliability under sustained fault conditions. Since the die temperature is directly dependent upon the heat sink, the heat sink should be chosen as discussed in the Thermal Considerations section, such that thermal shutdown will not be reached during normal operation. Using the best heat sink possible within the cost and space con- straints of the system will improve the long-term reliability of any power semiconductor device. THERMAL CONSIDERATIONS Heat Sinking The choice of a heat sink for a high-power audio amplifier is made entirely to keep the die temperature at a level such that the thermal protection circuitry does not operate under normal circumstances. The heat sink should be chosen to dissipate the maximum IC power for a given supply voltage and rated load. With high-power pulses of longer duration than 100 ms, the case temperature will heat up drastically without the use of a heat sink. Therefore the case temperature, as measured at the center of the package bottom, is entirely dependent on heat sink design and the mounting of the IC to the heat sink. For the design of a heat sink for your audio amplifier applica- tion refer to the Determining The Correct Heat Sink sec- tion. Since a semiconductor manufacturer has no control over which heat sink is used in a particular amplifier design, we can only inform the system designer of the parameters and the method needed in the determination of a heat sink. With this in mind, the system designer must choose his supply voltages, a rated load, a desired output power level, and know the ambient temperature surrounding the device. These parameters are in addition to knowing the maximum junction temperature and the thermal resistance of the IC, both of which are provided by National Semiconductor. As a benefit to the system designer we have provided Maxi- mum Power Dissipation vs Supply Voltages curves for vari- ous loads in the Typical Performance Characteristics sec- tion, giving an accurate figure for the maximum thermal resistance required for a particular amplifier design. This data was based on θ JC = 1˚C/W and θCS = 0.2˚C/W. We also provide a section regarding heat sink determination for any audio amplifier design where θ CS may be a different value. It should be noted that the idea behind dissipating the maxi- mum power within the IC is to provide the device with a low resistance to convection heat transfer such as a heat sink. Therefore, it is necessary for the system designer to be con- servative in his heat sink calculations. As a rule, the lower the thermal resistance of the heat sink the higher the amount of power that may be dissipated. This is of course guided by the cost and size requirements of the system. Convection cooling heat sinks are available commercially, and their manufacturers should be consulted for ratings. Proper mounting of the IC is required to minimize the thermal drop between the package and the heat sink. The heat sink must also have enough metal under the package to conduct heat from the center of the package bottom to the fins with- out excessive temperature drop. A thermal grease such as Wakefield type 120 or Thermalloy Thermacote should be used when mounting the package to the heat sink. Without this compound, thermal resistance will be no better than 0.5˚C/W, and probably much worse. With the compound, thermal resistance will be 0.2˚C/W or less, assuming under 0.005 inch combined flatness runout for the package and heat sink. Proper torquing of the mounting bolts is important and can be determined from heat sink manufacturer’s specification sheets. Should it be necessary to isolate V− from the heat sink, an in- sulating washer is required. Hard washers like beryluum ox- ide, anodized aluminum and mica require the use of thermal compound on both faces. Two-mil mica washers are most common, giving about 0.4˚C/W interface resistance with the compound. Silicone-rubber washers are also available. A 0.5˚C/W ther- mal resistance is claimed without thermal compound. Expe- rience has shown that these rubber washers deteriorate and must be replaced should the IC be dismounted. Determining Maximum Power Dissipation Power dissipation within the integrated circuit package is a very important parameter requiring a thorough understand- ing if optimum power output is to be obtained. An incorrect maximum power dissipation (P D) calculation may result in in- adequate heat sinking, causing thermal shutdown circuitry to operate and limit the output power. The following equations can be used to acccurately calculate the maximum and average integrated circuit power dissipa- tion for your amplifier design, given the supply voltage, rated load, and output power. These equations can be directly ap- plied to the Power Dissipation vs Output Power curves in the Typical Performance Characteristics section. Equation (1) exemplifies the maximum power dissipation of the IC and Equations (2), (3) exemplify the average IC power dissipation expressed in different forms. P DMAX = VCC2/2π 2R L (1) where V CC is the total supply voltage P DAVE = (VOpk/RL)[VCC/π −VOpk/2] (2) where V CC is the total supply voltage and VOpk = VCC/π www.national.com 13 |
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