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2SD1891 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD1891 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Darlington Power Transistor 2SD1891 DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR)CEO= 90V(Min) · High DC Current Gain : hFE= 5000(Min) @IC= 3A · Low Collector Saturation Voltgae- : VCE(sat)= 3.0V(Max.)@ IC= 3A · Complement to Type 2SB1251 · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · For power amplification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 90 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICP Collector Current-Peak 7 A PC Collector Power Dissipation @ Ta=25℃ 2 W Collector Power Dissipation @ TC=25℃ 40 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Similar Part No. - 2SD1891 |
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