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2SD1923 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # 2SD1923
Description  isc Silicon NPN Darlington Power Transistor DESCRIPTION
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD1923 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website:www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Darlington Power Transistor
2SD1923
DESCRIPTION
·
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
·
Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max) @IC= 3A
·
High DC Current Gain
: hFE= 2000(Min) @ IC= 2A, VCE= 3V
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed of driver of solenoid, relay and motor, series
regulator and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
4
A
IB
Base Current-Continuous
0.5
A
PC
Collector Power Dissipation
@ TC=25℃
25
W
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-55~150


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