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2SD1976 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1976 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Darlington Power Transistor 2SD1976 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 300 420 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; RBE= ∞ 300 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 40mA 2.0 V ICBO Collector Cutoff Current VCB= 300V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 7V; IC=0 50 mA hFE DC Current Gain IC= 4A; VCE= 2V 500 VECF C-E Diode Forward Voltage IF= 6A 3.5 V Switching times ton Turn-on Time IC= 4A , IB1= -IB2= 40mA VCC= 20V; 1.2 μ s tstg Storage Time 8.0 μ s tf Fall Time 8.0 μ s |
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