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2SC5784 Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part # 2SC5784
Description  TOSHIBA Transistor Silicon NPN Epitaxial Type
PDF  5 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC5784 Datasheet(HTML) 1 Page - Toshiba Semiconductor

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2SC5784
2001-12-17
1
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5784
High-Speed Switching Applications
DC-DC Converter Applications
• High DC current gain: hFE = 400 to 1000 (IC = 0.15 A)
• Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max)
• High-speed switching: tf = 45 ns (typ.)
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEX
30
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
7
V
DC
IC
1.5
Collector current
Pulse
ICP
2.5
A
Base current
IB
150
mA
t
= 10 s
750
Collector power
dissipation
DC
PC
(Note 1)
500
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note 1: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm
2)
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 40 V, IE = 0
100
nA
Emitter cut-off current
IEBO
VEB = 7 V, IC = 0
100
nA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
20
V
hFE (1)
VCE = 2 V, IC = 0.15 A
400
1000
DC current gain
hFE (2)
VCE = 2 V, IC = 0.5 A
200
Collector-emitter saturation voltage
VCE (sat)
IC = 0.5 A, IB = 10 mA
0.12
V
Base-emitter saturation voltage
VBE (sat)
IC = 0.5 A, IB = 10 mA
1.10
V
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
18
pF
Rise time
tr
43
Storage time
tstg
295
Switching time
Fall time
tf
See Figure 1 circuit diagram.
VCC ∼− 12 V, RL = 24 Ω
IB1 = −IB2 = 17 mA
45
ns
Industrial Applications
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-3S1A
Weight: 0.01 g (typ.)


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