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ISO809P Datasheet(PDF) 3 Page - Burr-Brown (TI) |
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ISO809P Datasheet(HTML) 3 Page - Burr-Brown (TI) |
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3 / 7 page ![]() 3 ® ISO809 POWER SUPPLIES Specified Performance VDIG1 Must be ≤ V ANA +4.75 +5 +5.25 V VANA +4.75 +5 +5.25 V VDIG2 +4.75 +5.25 V IDIG1 4.2 mA IANA 21 mA IDIG2 10.8 mA Power Dissipation VANA = VDIG = 5V, fS = 100kHz 175 mW TEMPERATURE RANGE Specified Performance –40 +85 °C Storage –65 +150 °C Thermal Resistance, θ JA Plastic DIP 75 °C/W SPECIFICATIONS (CONT) ELECTRICAL At TA = –40°C to +85°C, fS = 100kHz, VDIG = VANA = +5V, using internal reference and fixed resistors shown in Figure 3, unless otherwise specified. ISO809P PARAMETER CONDITIONS MIN TYP MAX UNITS NOTES: (1) LSB means Least Significant Bit. One LSB for the ±10V input range is 3.05µV. (2) Typical rms noise at worst case transition. (3) As measured with fixed resistors shown in Figure 7b. Adjustable to zero with external potentiometer. (4) Full scale error is the worst case of –Full Scale or +Full Scale untrimmed deviation from ideal first and last code transitions, divided by the transition voltage (not divided by the full-scale range) and includes the effect of offset error. (5) All specifications in dB are referred to a full-scale input. (6) Usable Bandwidth defined as Full-Scale input frequency at which Signal-to-(Noise + Distortion) degrades to 60dB. (7) Recovers to specified performance after 2 x FS input overvoltage. (8) All devices receive a 1s test. Failure criterion is ≥ 5 pulses of ≥ 5pC. (9) Tested at 2500Vrms, 50Hz limit 10 µA. ELECTROSTATIC DISCHARGE SENSITIVITY Electrostatic discharge can cause damage ranging from per- formance degradation to complete device failure. Burr- Brown Corporation recommends that all integrated circuits be handled and stored using appropriate ESD protection methods. ESD damage can range from subtle performance degrada- tion to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet published specifications. Analog Inputs: R1IN ........................................................................... ±25V R2IN ........................................................................... ±25V R3IN ........................................................................... ±25V CAP .................................... VANA +0.3V to AGND2 –0.3V REF ........................................... Indefinite Short to AGND, Momentary Short to VANA Ground Voltage Differences: DGND and AGND ............................... ±0.3V DGND, AGND, and GNDISO ........... 1563Vrms VANA ....................................................................................................... 7V VDIG to VANA ...................................................................................... +0.3V VDIG ........................................................................................................ 7V Digital Inputs .............................................................. –0.3V to VDIG +0.3V Maximum Junction Temperature ................................................... +165 °C Internal Power Dissipation ............................................................. 700mW Lead Temperature (soldering, 10s) ................................................ +300 °C ABSOLUTE MAXIMUM RATINGS PACKAGE INFORMATION PACKAGE DRAWING PRODUCT PACKAGE NUMBER(1) ISO809P 28-Pin Plastic DIP 215-1 NOTE: (1) For detailed drawing and dimension table, please see end of data sheet, or Appendix C of Burr-Brown IC Data Book. MAXIMUM INTEGRAL TYPICAL SIGNAL-TO- SPECIFICATION PRODUCT LINEARITY ERROR (LSB) (NOISE + DISTORTION) RATIO (dB) TEMPERATURE RANGE ( °C) PACKAGE ISO809P ±4 83 –40 °C to +85°C 28-Pin Plastic DIP ORDERING INFORMATION |
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