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LM4431 Datasheet(PDF) 2 Page - National Semiconductor (TI) |
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LM4431 Datasheet(HTML) 2 Page - National Semiconductor (TI) |
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2 / 8 page ![]() Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Reverse Current 20 mA Forward Current 10 mA Power Dissipation (T A = 25˚C) (Note 2) M3 Package 306 mW Storage Temperature −65˚C to +150˚C Lead Temperature M3 Package Vapor phase (60 seconds) +215˚C Infrared (15 seconds) +220˚C ESD Susceptibility Human Body Model (Note 3) 2 kV Machine Model (Note 3) 200V See AN-450 “Surface Mounting Methods and Their Effect on Product Reliability” for other methods of soldering surface mount devices. Operating Ratings(Notes 1, 2) Temperature Range (T min ≤ TA ≤ Tmax) 0˚C ≤ T A ≤ +70˚C Reverse Current LM4431-2.5 100 µA to 15 mA LM4431-2.5 Electrical Characteristics Boldface limits apply for T A = TJ = TMIN to TMAX; all other limits TA = TJ = 25˚C. Symbol Parameter Conditions Typical LM4431M3 Units (Note 4) Limits (Limit) (Note 5) V R Reverse Breakdown Voltage I R = 100 µA 2.500 V Reverse Breakdown VoltageTolerance I R = 100 µA ±50 mV (max) I RMIN Minimum Operating Current 45 µA 100 µA (max) ∆V R/∆T Average Reverse Breakdown I R = 10 mA ±30 ppm/˚C Voltage Temperature I R = 1mA ±30 ppm/˚C Coefficient I R = 100 µA ±30 ppm/˚C ∆V R/∆IR Reverse Breakdown Voltage I RMIN ≤ IR ≤ 1 mA 0.4 mV Change with Operating 1.0 mV (max) Current Change 1.2 mV (max) 1mA ≤ I R ≤ 15 mA 2.5 mV 8.0 mV (max) 25 mV (max) Z R Reverse Dynamic Impedance I R = 1 mA, f = 120 Hz 1.0 Ω I AC = 0.1 IR e N Wideband Noise I R = 100 µA 35 µV rms 10 Hz ≤ f ≤ 10 kHz ∆V R Reverse Breakdown Voltage t = 1000 hrs Long Term Stability T = 25˚C ±0.1˚C 120 ppm I R = 100 µA Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is func- tional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed speci- fications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions. Note 2: The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature), θJA (junction to am- bient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is PDmax = (TJmax −TA)/θJA or the number given in the Absolute Maximum Ratings, whichever is lower. For the LM4431, TJmax = 125˚C, and the typical thermal resistance (θJA), when board mounted, is 326˚C/W for the SOT-23 package. Note 3: The human body model is a 100 pF capacitor discharged through a 1.5 k Ω resistor into each pin. The machine model is a 200 pF capacitor discharged di- rectly into each pin. Note 4: Typicals are at TJ = 25˚C and represent most likely parametric norm. Note 5: Limits are 100% production tested at 25˚C. Limits over temperature are guaranteed through correlation using Statistical Quality Control (SQC) methods. The limits are used to calculate National’s AOQL. www.national.com 2 |
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