NE73430 datasheet(2/5 Pages) NEC

2 / 5 page

ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)

SYMBOLS

PARAMETERS

UNITS

RATINGS

VCBO

Collector to Base Voltage

VCEO

Collector to Emitter Voltage

VEBO

Emitter to Base Voltage

Collector Current

Junction Temperature

°C

2002

TSTG

Storage Temperature

°C

-65 to +2003

Notes:

1. Operation in excess of any one of these parameters may result

in permanent damage.

2. Maximum Junction Temperature for the NE73430 is 150

°C.

3. Maximum Storage Temperature for the NE73430 and the

NE73435 Grade D is 150

°C.

FREQ.

NFOPT

ΓΓΓΓΓOPT

(MHz)

(dB)

MAG

ANG

Rn/50

VCE = 10 V, IC = 3 mA

500

2.0

16.1

0.30

0.63

1000

3.1

11.2

0.43

126

0.33

1500

4.2

9.2

0.54

168

0.19

2000

5.1

7.1

0.56

178

0.20

NE73435

TYPICAL NOISE PARAMETERS (TA = 25°C)

NE734 SERIES

VCE = 10 V, IC = 15 mA

500

3.3

17.5

0.34

120

0.36

1000

4.7

13.5

0.47

168

0.27

1500

6.5

10.8

0.67

-174

0.13

2000

7.4

9.2

0.64

-163

0.46

TYPICAL PERFORMANCE CURVES (TA = 25°C)

SATURATION VOLTAGE vs.

COLLECTOR CURRENT

Collector Current, IC (mA)

VBE(SAT)

IC = 10XIB

VCE(SAT)

0.1

0.2

0.5

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

Collector Current, IC (mA)

GAIN BANDWIDTH PRODUCT

vs. COLLECTOR CURRENT

VCE = 10 V

NE73435

0.5 0.7 1

5 7

0.7

0.5

0.3

0.1

0.2

Collector Current, IC (mA)

DC CURRENT GAIN

vs. COLLECTOR CURRENT

VCE = 10 V

VCE = 1 V

0.5 0.7 1

500

300

200

100

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