NTP65N02 datasheet(2/4 Pages) ONSEMI

2 / 4 page

NTB65N02R, NTP65N02R

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless otherwise specified)

Characteristics

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage (Note 4)

(VGS = 0 Vdc, ID = 250 mAdc)

Temperature Coefficient (Positive)

V(br)DSS

–

27.5

25.5

–

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 20 Vdc, VGS = 0 Vdc)

(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 150°C)

IDSS

–

1.5

mAdc

Gate–Body Leakage Current

(VGS = ±20 Vdc, VDS = 0 Vdc)

IGSS

–

±100

nAdc

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage (Note 4)

(VDS = VGS, ID = 250 mAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

1.0

–

1.5

–4.1

2.0

–

Vdc

mV/

°C

Static Drain–to–Source On–Resistance (Note 4)

(VGS = 4.5 Vdc, ID = 15 Adc)

(VGS = 10 Vdc, ID = 20 Adc)

(VGS = 10 Vdc, ID = 30 Adc)

RDS(on)

–

10.5

8.3

9.5

12.5

10.5

–

Forward Transconductance (Note 4)

(VDS = 10 Vdc, ID = 15 Adc)

gFS

–

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

Ciss

–

1050

1470

Output Capacitance

(VDS = 24 Vdc, VGS = 0 V f = 1 MHz)

Coss

–

394

550

Transfer Capacitance

( DS

dc,

)

Crss

–

120

SWITCHING CHARACTERISTICS (Note 5)

Turn–On Delay Time

td(on)

–

11.2

Rise Time

(VGS = 5 Vdc, VDD = 10 Vdc,

–

100

Turn–Off Delay Time

(VGS = 5 Vdc, VDD = 10 Vdc,

ID = 30 Adc, RG = 3 W)

td(off)

–

Fall Time

–

Gate Charge

–

8.4

(VGS = 4.5 Vdc, ID = 30 Adc,

VDS = 10 Vdc) (Note 4)

–

3.7

–

VDS = 10 Vdc) (Note 4)

–

4.04

–

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

(IS = 20 Adc, VGS = 0 Vdc) (Note 4)

VSD

–

0.88

1.2

Vdc

Forward On Voltage

(IS = 20 Adc, VGS = 0 Vdc) (Note 4)

(IS = 30 Adc, VGS = 0 Vdc)

20 A

125

°C)

VSD

–

0.88

1.10

080

1.2

–

Vdc

( S

dc,

dc)

(IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C)

–

0.80

–

Reverse Recovery Time

trr

–

15.5

–

(IS = 20 Adc, VGS = 0 Vdc,

–

12.6

–

(IS = 20 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/ms) (Note 4)

–

2.6

–

Reverse Recovery Stored Charge

QRR

–

0.005

–

4. Pulse Test: Pulse Width = 300

ms, Duty Cycle = 2%.

5. Switching characteristics are independent of operating junction temperatures.

NTP65N02 Datasheet(PDF) 2 Page - ON Semiconductor

NTP65N02 Datasheet(HTML) 2 Page - ON Semiconductor

Html Pages

1 2 3 4

Datasheet Download

Link URL