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2SD730 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD730 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Darlingtion Power Transistor 2SD730 DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) · High DC Current Gain- : hFE= 1000(Min.)@IC= 12A · Low Collector Saturation Voltage- : VCE (sat)= 3.0V(Max.)@ IC= 20A · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Power switching · Hammer drivers · Series and shunt regulator · General purpose amplifier amplifiers ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7.0 V IC Collector Current -Continuous 25 A ICP Collector Current-Peak 40 A IB Base Current 0.5 A PC Collector Power Dissipation@TC=25℃ 125 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ |
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