MJD122 datasheet(1/8 Pages) ONSEMI

Part #	MJD122

Description	Complementary Darlington Power Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

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September, 2016 − Rev. 15

1

Publication Order Number:

MJD122/D

MJD122, NJVMJD122

(NPN), MJD127,

NJVMJD127 (PNP)

Complementary Darlington

Power Transistor

DPAK For Surface Mount Applications

Designed for general purpose amplifier and low speed switching

applications.

Features

• Lead Formed for Surface Mount Applications in Plastic Sleeves

• Surface Mount Replacements for 2N6040−2N6045 Series,

TIP120−TIP122 Series, and TIP125−TIP127 Series

• Monolithic Construction With Built−in Base−Emitter Shunt Resistors

• High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 Adc

• Epoxy Meets UL 94 V−0 @ 0.125 in

• ESD Ratings:

♦ Human Body Model, 3B > 8000 V

♦ Machine Model, C > 400 V

• NJV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MARKING DIAGRAM

A

= Assembly Location

Y

= Year

WW

= Work Week

x

= 2 or 7

G

= Pb−Free Package

DPAK

CASE 369C

STYLE 1

AYWW

J12xG

SILICON

POWER TRANSISTOR

8 AMPERES

100 VOLTS, 20 WATTS

www.onsemi.com

COLLECTOR 2, 4

BASE

1

EMITTER 3

See detailed ordering and shipping information in the package

dimensions section on page 7 of this data sheet.

ORDERING INFORMATION

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