2N6250 datasheet(2/4 Pages) MA-COM

2 / 4 page

NPN Darlington Power Silicon Transistor

Rev. V1

2N6249, 2N6250, & 2N6251

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DC-0013428

Absolute Maximum Ratings

2. Derate linearly @ 34.2 mW / °C for TA >25°C.

3. Derate linearly @ 1.0 mW / °C for TC >27°C.

Ratings

Symbol

2N6249

2N6250

2N6251

Units

Collector - Emitter Voltage

VCEO

200

275

350

Vdc

Collector - Base Voltage

VCBO

300

375

450

Vdc

Emitter - Base Voltage

VEBO

Vdc

Collector Current

Adc

Base Current

Adc

Total Power Dissipation

@ TA = +25°C

175

Operating & Storage Temperature Range

TOP, TSTG

-65 to +200

°C

Thermal Characteristics

Characteristics

Symbol

Max. Value

Thermal Resistance, Junction to Case

RθJC

1.25°C/W

Electrical Characteristics

Parameter

Test Conditions

Symbol Units

Min.

Max.

Dynamic Characteristics

Small-Signal Short-Circuit Forward Current

Transfer Ratio

IC = 1 Adc, VCE = 10 Vdc, f = 1 kHz

| HFE |

2.5

15.0

Output Capacitance

VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1 MHz COBO

—

500

Switching Characteristics

Turn-On Time

VCC = 200 Vdc; IC = 1 Adc;

IB1 = 1.0 Adc, 2N6249

IB1 = 1.25 Adc, 2N6250

IB1 = 1.67 Adc, 2N6251

TON

µs

—

2.0

Turn-Off Time

VCC = 200 Vdc; IC = 1 Adc;

IB1 = 1.0 Adc, 2N6249

IB1 = 1.25 Adc, 2N6250

IB1 = 1.67 Adc, 2N6251

TOFF

µs

—

4.5

Safe Operating Area

DC Tests:

TC = +25 °C, I Cycle, t = 1.0 s (see figure 12 of MIL-PRF-19500/371)

Test 1:

VCE = 17.5 Vdc, IC = 10 Adc

Test 2:

VCE = 30 Vdc, IC = 5.8 Adc

Test 3:

VCE = 100 Vdc, IC = 0.3 Adc

Test 4:

VCE = 200 Vdc, IC = 0.13 Adc, (for 2N6249 only)

Test 5:

VCE = 275 Vdc, IC = 0.09 Adc, (for 2N6250 only)

Test 3:

VCE = 350 Vdc, IC = 0.09 Adc, (for 2N6251 only)

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