2N6299 datasheet(1/3 Pages) MA-COM

Part #	2N6299

Description	PNP Darlington Power Silicon Transistor

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	MA-COM [M/A-COM Technology Solutions, Inc.]

Direct Link	http://www.macomtech.com

Logo

1 / 3 page

PNP Darlington Power Silicon Transistor

Rev. V1

2N6298 & 2N6299

1

MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

DC-0013435

1

Features

 Available in JAN, JANTX, JANTXV per

MIL-PRF-19500/540

 TO-66 (TO-213AA) Package

Electrical Characteristics

Parameter

Test Conditions

Symbol Units

Min.

Max.

Off Characteristics

Collector - Emitter Breakdown Voltage

IC = 100 mAdc, 2N6298

IC = 100 mAdc, 2N6299

V(BR)CEO Vdc

60

80

—

Collector - Emitter Cutoff Current

VCE = 30 Vdc, 2N6298

VCE = 40 Vdc, 2N6299

ICEO

mAdc

—

0.5

Collector - Emitter Cutoff Current

VCE = 60 Vdc, VBE = 1.5 Vdc, 2N6298

VCE = 80 Vdc, VBE = 1.5 Vdc, 2N6299

ICEX

µAdc

—

10

Emitter - Base Cutoff Current

VEB = 5 Vdc

IEBO

mAdc

—

2

On Characteristics1

Forward Current Transfer Ratio

IC = 1 Adc, VCE = 3 Vdc

IC = 4 Adc, VCE = 3 Vdc

IC = 8 Adc, VCE = 3 Vdc

HFE

-

500

750

100

18,000

Collector - Emitter Saturation Voltage

IC = 4 Adc, IB = 16 Adc

IC = 8 Adc, IB = 80 Adc

VCE(SAT) Vdc

—

2.0

Base - Emitter Saturation Voltage

IC = 8 Adc, IB = 80 Adc

VCE(SAT) Vdc

—

4.0

Base - Emitter Voltage

IC = 4 Adc, VCE = 10 Vdc

VBE(ON)

Vdc

—

2.8

Dynamic Characteristics

Magnitude of Common Emitter Small-Signal

Short-Circuit Forward Current Transfer Ratio

IC = 3 Adc, VCE = 3 Vdc, f = 1.0 kHz

| HFE |

-

25

350

Small-Signal Short-Circuit Forward Current

Transfer Ratio

IC = 3 Adc, VCE = 3 Vdc, f = 1.0 kHz

| HFE |

-

300

—

Output Capacitance

VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1 MHz COBO

pF

—

200

Switching Characteristics

Turn-On Time

VCC = 30 Vdc; IC = 4.0 Adc;

IB1 = 16 mAdc

TON

µs

—

2.0

Turn-Off Time

VCC = 30 Vdc; IC = 4.0 Adc;

IB1 = 16 mAdc

TOFF

µs

—

8.0

Safe Operating Area

DC Tests:

TC = +25 °C, I Cycle, t = 1.0 s

Test 1:

VCE = 8.0 Vdc, IC = 8.0 Adc

Test 2:

VCE = 20 Vdc, IC = 2.0 Adc

Test 3:

VCE = 60 Vdc, IC = 100 Adc, 2N6298

VCE = 80 Vdc, IC = 100 Adc, 2N6299

1. Pulse Test: Pulse Width = 300 μs, Duty Cycle ≤2.0%.

Similar Part No. - 2N6299

Manufacturer	Part #	Datasheet	Description
Mospec Semiconductor	2N6299	177Kb / 4P	POWER TRANSISTORS(8A, 75W)
Boca Semiconductor Corp...	2N6299	184Kb / 4P	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
Microsemi Corporation	2N6299	65Kb / 2P	PNP DARLINGTON POWER SILICON TRANSISTOR
Central Semiconductor C...	2N6299	51Kb / 1P	Power Transistors
Savantic, Inc.	2N6299	116Kb / 3P	Silicon PNP Power Transistors

More results

Similar Description - 2N6299

Manufacturer	Part #	Datasheet	Description
Comset Semiconductor	2N6285	80Kb / 3P	PNP DARLINGTON POWER SILICON TRANSISTOR
New Jersey Semi-Conduct...	2SB1568	71Kb / 2P	Silicon PNP Darlington Power Transistor
	2SB1481	76Kb / 2P	Silicon PNP Darlington Power Transistor
	2SB1495	72Kb / 2P	Silicon PNP Darlington Power Transistor
	TIP147T	79Kb / 2P	Silicon PNP Darlington Power Transistor
	BDW44	137Kb / 2P	Silicon PNP Darlington Power Transistor
	BDW24	142Kb / 2P	Silicon PNP Darlington Power Transistor
	2SB676	125Kb / 2P	Silicon PNP Darlington Power Transistor
Zibo Seno Electronic En...	MJ11016	197Kb / 2P	Silicon PNP Darlington Power Transistor
Zibo Seno Electronic En...	MJ11032	195Kb / 2P	Silicon PNP Darlington Power Transistor

More results

2N6299 Datasheet(PDF) 1 Page - M/A-COM Technology Solutions, Inc.

2N6299 Datasheet(HTML) 1 Page - M/A-COM Technology Solutions, Inc.

Similar Part No. - 2N6299

Similar Description - 2N6299

Html Pages

1 2 3

Datasheet Download

Link URL