2N6678 datasheet(2/4 Pages) MA-COM

2 / 4 page

NPN High Power Silicon Transistor

Rev. V1

2N6676 & 2N6678

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DC-0013439

Absolute Maximum Ratings

2. Derate linearly @ 34.2 mW / °C for TA >25°C.

Ratings

Symbol

2N6676

2N6678

Units

Collector - Emitter Voltage

VCEO

300

400

Vdc

Collector - Base Voltage

VCBO/VCBX

450

650

Vdc

Emitter - Base Voltage

VEBO

Vdc

Collector Current

Adc

Base Current

Adc

Total Power Dissipation

@ TA = +25°C

175

Operating & Storage Temperature Range

TOP, TSTG

-65 to +200

°C

Thermal Characteristics

Characteristics

Symbol

Max. Value

Thermal Resistance, Junction to Case

RθJC

1°C/W

Electrical Characteristics

Parameter

Test Conditions

Symbol Units

Min.

Max.

Switching Characteristics

Delay Time

Rise Time

Storage Time

Fall Time

Cross-Over Time

See figure 12 of MIL-PRF-19500/538

µs

—

0.1

0.6

2.5

0.5

Safe Operating Area

DC Tests:

TC = +25°C, I Cycle, t = 1.0 s (see figure 4 of MIL-PRF-19500/537)

Test 1:

VCE = 11.7 Vdc, IC = 15 Adc

Test 2:

VCE = 30 Vdc, IC = 5.9 Adc

Test 3:

VCE = 100 Vdc, IC = 0.25 Adc

Test 4:

VCE = 300 Vdc, IC = 20 mAdc, (for 2N6676)

Test 5:

VCE = 400 Vdc, IC = 10 mAdc, (for 2N6678)

Clamped Switch:

TA = +25°C, VCC = 15 Vdc

Clamp Voltage = 350; IC = 15 Adc, (2N6676)

Clamp Voltage = 450; IC = 15 Adc, (2N6678)

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