TPC8302 datasheet(3/7 Pages) TOSHIBA

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TPC8302

2002-05-17

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±10 V, VDS = 0 V

—

±10

µA

Drain cut−OFF current

IDSS

VDS = −20 V, VGS = 0 V

—

−10

µA

Drain−source breakdown voltage

V (BR) DSS

ID = −10 mA, VGS = 0 V

−20

—

Gate threshold voltage

Vth

VDS = −10 V, ID = −200 µA

−0.5

—

−1.1

RDS (ON)

VGS = −2.5 V, ID = −1.8 A

—

135

170

Drain−source ON resistance

RDS (ON)

VGS = −4 V, ID = −1.8 A

—

100

120

mΩ

Forward transfer admittance

|Yfs|

VDS = −10 V, ID = −1.8 A

2.5

—

Input capacitance

Ciss

—

680

—

Reverse transfer capacitance

Crss

—

Output capacitance

Coss

VDS = −10 V, VGS = 0 V, f = 1 MHz

—

310

—

Rise time

—

Turn−ON time

ton

—

Fall time

—

Switching time

Turn−OFF time

toff

—

Total gate charge (Gate−source

plus gate−drain)

—

Gate−source charge

Qgs

—

Gate−drain (“miller”) charge

Qgd

VDD ≈ −16 V, VGS = − 5 V, ID = −3.5 A

—

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse

current

Pulse (Note 1)

IDRP

—

−14

Forward voltage (diode)

VDSF

IDR = −3.5 A, VGS = 0 V

—

1.2

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