R

V6340

Copyright © 2005, EM Microelectronic-Marin SA

03/06 – rev.K

2

www.emmicroelectronic.com

Absolute Maximum Ratings

Parameter

Symbol

Conditions

-0.3V to +8V

Minimum voltage at RES or

RES

Maximum voltage at RES or

RES

Storage Temperature Range

-65°C to +150°C

Table 1

Stresses above these listed maximum ratings may cause

permanent damages to the device. Exposure beyond

specified operating conditions may affect device reliability or

cause malfunction.

Handling Procedures

This device has built-in protection against high static

voltages or electric fields; however, it is advised that normal

precautions be taken as for any other CMOS component.

Unless otherwise specified, proper operation can only occur

when all terminal voltages are kept within the voltage range.

Operating Conditions

Parameter

Symbol Min

Max

Unit

Operating Temperature

1)

-40

+125

°C

Positive Supply Voltage

2)

1

5.5

V

Table 2

sampling at initial device qualification. In production, all

devices are tested at +25°C

information)

Electrical Characteristics

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Supply current

38

50

µA

Threshold voltage

C, I, O

2.94

3.02

3.10

V

D, J, P

3.62

3.72

3.82

V

F, L, R

4.27

4.39

4.51

V

Threshold hysteresis

5

mV

RES Output Low Level

200

270

mV

195

250

mV

198

250

mV

185

250

mV

RES Output High Level

1.25

1.36

V

2.2

2.3

V

3.15

3.27

V

4.65

4.76

V

Output leakage current

1)

0.005

1

µA

Only for version B, H and N

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Supply current

19

31

µA

Threshold voltage

B, H, N

2.56

2.65

2.74

V

Threshold hysteresis

32

mV

Table 3

1)

Only for Open drain versions

Timing Waveform

Block Diagram

Voltage

Reference

+

-

RES or

RES

V

SS

V

DD

Fig.3

Fig.4